# Potential Sputtering of Clean SiO 2 by Slow Highly Charged Ions

@article{Sporn1997PotentialSO, title={Potential Sputtering of Clean SiO 2 by Slow Highly Charged Ions}, author={M. Sporn and G. Libiseller and T. Neidhart and M. Schmid and F. Aumayr and H. Winter and P. Varga and M. Grether and D. Niemann and N. Stolterfoht}, journal={Physical Review Letters}, year={1997}, volume={79}, pages={945-948} }

The recently discovered phenomenon of potential sputtering, i.e., the efficient removal of neutral and ionized target particles from certain insulator surfaces due to the potential rather than the kinetic energy of impinging slow highly charged ions, has now also been observed for stoichiometric ${\mathrm{SiO}}_{2}$ surfaces. Using a sensitive quartz crystal microbalance technique, total sputter yields induced by ${\mathrm{Ar}}^{q+}\phantom{\rule{0ex}{0ex}}(q\ensuremath{\le}14)$ and ${\mathrmâ€¦Â Expand

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