Postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate

@article{Jo2004PostgrowthAE,
  title={Postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate},
  author={M. Jo and N. Yasuhara and Yutaro Sugawara and Kunio Kawamoto and Susumu Fukatsu},
  journal={First IEEE International Conference on Group IV Photonics, 2004.},
  year={2004},
  pages={121-123}
}
We have studied postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate. A sharp line associated with {311} defects dominates the PL spectra when annealed at above 600 /spl deg/C.