Postannealing effect on properties of hydrogenated amorphous Si(Mn) magnetic semiconductors

@inproceedings{Yao2010PostannealingEO,
  title={Postannealing effect on properties of hydrogenated amorphous Si(Mn) magnetic semiconductors},
  author={J. Yao and Ming-Yuan Chen and Jai-Lin Tsai and Ming-Der Lan and T. Chin},
  year={2010}
}
Postannealing effect was studied on films of hydrogenated amorphous silicon with Mn addition grown by magnetron cosputtering. Structural, magnetic, and electrical properties were investigated. We did not detect any second phases or clusters after annealing. Annealing enhances saturation magnetization, electrical conductivity, and carrier concentration by about 250%, 350%, and two orders of magnitude, respectively. Anomalous Hall effect was observed at 100 K, indicating ferromagnetism mediated… CONTINUE READING