Possible way to achieve anomalous valley Hall effect by piezoelectric effect in a GdCl2 monolayer

@article{Guo2021PossibleWT,
  title={Possible way to achieve anomalous valley Hall effect by piezoelectric effect in a 
GdCl2
 monolayer},
  author={San-Dong Guo and Jing-Xin Zhu and Wen-Qi Mu and Bang-Gui Liu},
  journal={Physical Review B},
  year={2021}
}
San-Dong Guo, Jing-Xin Zhu, Wen-Qi Mu and Bang-Gui Liu School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, China 2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 

References

SHOWING 1-10 OF 27 REFERENCES
Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.
TLDR
The continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.
Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle
Field-induced polarization of Dirac valleys in bismuth
Multiple valleys in the electronic structure of certain crystal lattices could enable the development of so-called valleytronic devices. But to do so, the degeneracy of these valleys must be lifted.
Biaxial strain tuned electronic structures and power factor in Janus transition metal dichalchogenide monolayers
Tuning physical properties of transition metal dichalcogenide (TMD) monolayers by strain engineering have most widely studied, and recently Janus TMD monolayer MoSSe has been synthesized. In this
Large valley-polarized state in single-layer NbX2 (X = S, Se): Theoretical prediction
Exploring two-dimensional valleytronic crystals with large valley-polarized state is of considerable importance due to the promising applications in next-generation information related devices. Here,
Two-dimensional ferromagnetic semiconductors of rare-earth monolayer GdX2 (X = Cl, Br, I) with large perpendicular magnetic anisotropy and high Curie temperature
Abstract Two-dimensional (2D) ferromagnetic semiconductors are considered to be one of the most promising candidates for spintronics. Nonetheless, the 2D ferromagnetic semiconductors with large
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
TLDR
It is shown that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with even number of layers, which may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics.
Strain-Induced Optimization of Nanoelectromechanical Energy Harvesting and Nanopiezotronic Response in a MoS2 Monolayer Nanosheet
Besides the intrinsic semiconducting direct band gap in monolayer MoS2 (ML-MoS2), piezoelectricity arises in it due to the broken inversion symmetry. This underscores the need to unveil the
Small strain induced large piezoelectric coefficient in α-AsP monolayer
Abstract Strain engineering can effectively tune the electronic, topological and piezoelectric properties of materials. In this work, the small strain (−4%–4%) effects on piezoelectric properties of
Large In-Plane and Vertical Piezoelectricity in Janus Transition Metal Dichalchogenides.
TLDR
The study reveals the potential for utilizing piezoelectric 2D materials and their van der Waals multilayer structures in device applications.
...
1
2
3
...