Possible electric field induced indirect to direct band gap transition in MoSe2

@inproceedings{Kim2017PossibleEF,
  title={Possible electric field induced indirect to direct band gap transition in MoSe2},
  author={Byoung-Gie Kim and Won Seo Kyung and J. J. Seo and Jinuk Kwon and J. D. Denlinger and Chunglee Kim and Seongseop Park},
  booktitle={Scientific Reports},
  year={2017}
}
  • Byoung-Gie Kim, Won Seo Kyung, +4 authors Seongseop Park
  • Published in Scientific Reports 2017
  • Materials Science, Medicine
  • Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2 have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters. Here, we report… CONTINUE READING

    Create an AI-powered research feed to stay up to date with new papers like this posted to ArXiv

    Figures and Topics from this paper.

    Citations

    Publications citing this paper.
    SHOWING 1-3 OF 3 CITATIONS

    References

    Publications referenced by this paper.
    SHOWING 1-10 OF 45 REFERENCES