Possible applications of topological insulator thin films for tunnel FETs

@article{Chang2012PossibleAO,
  title={Possible applications of topological insulator thin films for tunnel FETs},
  author={Jiwon Chang and Leonard Frank Register and S. K. Banerjee},
  journal={70th Device Research Conference},
  year={2012},
  pages={31-32}
}
We have begun to explore the possibility of thin film three dimensional (3D) topological insulator (TI) based tunnel FETs (TFETs), specifically Bi2Se3 here, using quantum ballistic transport simulations with a tight-binding Hamiltonian in the atomic orbital basis including spin degrees of freedom. TI-based TFETs would be analogous in some ways to graphene nanoribbon TFETs, but without the sensitivity to ribbon width and edge roughness, and in some ways to narrow gap III-V TFETs but with… CONTINUE READING

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