Positron Spectroscopy of Defects in Semiconductors

@inproceedings{Hautojrvi1995PositronSO,
  title={Positron Spectroscopy of Defects in Semiconductors},
  author={Pekka J. Hautoj{\"a}rvi},
  year={1995}
}
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes observable changes in annihilation characteristics: the positron lifetime increases and the positron-electron momentum distribution narrows. Positron trapping in semiconductors is analogous to carrier capture. Due to the long-range Coulomb interaction, the charge state of a vacancy has a strong effect on positron trapping. The lattice relaxation due to a charge-state transition of a vacancy is… CONTINUE READING

Figures and Tables from this paper.

Citations

Publications citing this paper.
SHOWING 1-10 OF 16 CITATIONS

References

Publications referenced by this paper.

Positrons in Solids (Topics in Current Physics vol

P Hautojarvi, Ed
  • 1979