Polymer Filling of Silicon Trenches for 3-D Through Silicon vias Applications

  title={Polymer Filling of Silicon Trenches for 3-D Through Silicon vias Applications},
  author={Fabrice F. C. Duval and Chuckwudi Okoro and Yann Civale and Philippe Soussan and Eric Beyne},
  journal={IEEE Transactions on Components, Packaging and Manufacturing Technology},
Ring-shaped silicon trenches with a depth of 50 were filled with different spin-on dielectric (SOD) polymers. Ultimately, the polymer should serve as deep trench isolation layers, also called liners, for 3-D wafer-level packaging through silicon vias (TSVs). TSVs allow the vertical stacking and interconnection of multiple devices. 3-D packaging is an emerging technology that can be an alternative solution to scaling issues in complementary metal oxide semiconductors. SODs with different… CONTINUE READING
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