Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

@article{Hampson2004PolyimidePA,
  title={Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz},
  author={M A Hampson and Shyh-Chiang Shen and R G Schwindt and R. Kirk Price and Uttiya Chowdhury and M N L Wong and Ting Gang Zhu and Dongwon Yoo and R. D. Dupuis and Milton Feng},
  journal={IEEE Electron Device Letters},
  year={2004},
  volume={25},
  pages={238-240}
}
Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-/spl mu/m devices with 2/spl times/75 /spl mu/m total gate… CONTINUE READING

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