Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

  title={Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz},
  author={M A Hampson and Shyh-Chiang Shen and R G Schwindt and R. Kirk Price and Uttiya Chowdhury and M N L Wong and Ting Gang Zhu and Dongwon Yoo and R. D. Dupuis and Milton Feng},
  journal={IEEE Electron Device Letters},
Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-/spl mu/m devices with 2/spl times/75 /spl mu/m total gate… CONTINUE READING


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Publications referenced by this paper.
Showing 1-9 of 9 references

Applications of SiC MESFETs and GaN HEMTs in power amplifier design

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) • 2002
View 10 Excerpts
Highly Influenced

10-W/mm AlGaN-GaN HFET with a field modulating plate

IEEE Electron Device Letters • 2003
View 8 Excerpts
Highly Influenced

Experimental power-frequency limits of AlGaN–GaN HEMTs

L. F. Eastman
IEEE MTT-S Tech. Dig., 2002, pp. 2273–2275. • 2002
View 8 Excerpts
Highly Influenced

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

H. Kim, R. M. Thompson, +3 authors L. F. Eastman
IEEE Electron Device Lett., vol. 24, pp. 421–423, July 2003. • 2003
View 1 Excerpt

Improved performance of AlGaN–GaN heterojunction field-effect transistors using delta doping and a binary barrier

M. M. Wong, U. Chowdhury, +6 authors R. D. Dupuis
Jpn. J. Appl. Phys., vol. 42, pp. L353–L355, 2003. • 2003
View 2 Excerpts

An AlGaN–GaN high-electron mobility transistor with an AlN sub-buffer layer

J. R. Shealy, V. Kaper, +4 authors L. F. Eastman
Phys. Rev. B, Condens. Matter, vol. 14, pp. 3499–3505, 2002. • 2002
View 1 Excerpt

Characterization of low-stress LPCVD silicon nitride in high frequency BJTs with self-aligned metallization

H. W. Van Zeijl, L. K. Nanver
Proc. Int. Conf. Solid-State and Integrated Circuit Technology, 1998, pp. 98–101. • 1998
View 1 Excerpt

Stress in polyimide coatings

J. C. Coburn, M. T. Pottiger, S. C. Noe, S. D. Senturia
J. Polym. Sci. B, Polym. Phys., vol. 32, no. 7, pp. 1271–1283, 1994. • 1994
View 1 Excerpt

Measurement of stresses generated in cured polyimide films

C. Goldsmith, P. Geldermans, F. Bedetti, G. A. Walker
J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 2, no. 1, pp. 407–409, 1983. • 1983
View 1 Excerpt

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