Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization

@article{Meng2006PolycrystallineSF,
  title={Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization},
  author={Zhiguo Meng and Shuyun Zhao and C. M. L. Wu and Bo Zhang and Man Wong and Hoi-Sing Kwok},
  journal={Journal of Display Technology},
  year={2006},
  volume={2},
  pages={265-273}
}
Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly… CONTINUE READING
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