Polyamorphic amorphous silicon at high pressure: raman and spatially resolved X-ray scattering and molecular dynamics studies.

@article{Daisenberger2011PolyamorphicAS,
  title={Polyamorphic amorphous silicon at high pressure: raman and spatially resolved X-ray scattering and molecular dynamics studies.},
  author={Dominik Daisenberger and Thierry Deschamps and Bernard Champagnon and Mohamed Mezouar and Ra{\'u}l Quesada Cabrera and M. C. T. Wilson and Paul F McMillan},
  journal={The journal of physical chemistry. B},
  year={2011},
  volume={115 48},
  pages={14246-55}
}
We studied the low-frequency Raman and X-ray scattering behavior of amorphous silicon (a-Si) at high pressure throughout the range where the density-driven polyamorphic transformation between the low-density amorphous (LDA) semiconductor and a novel metallic high-density amorphous (HDA) polyamorph occurs. The experimental data were analyzed with the aid of molecular dynamics (MD) simulations using the Stillinger-Weber potential. The heat capacity of a-Si obtained from the low pressure Raman… CONTINUE READING

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