Polarization-engineering in group III-nitride heterostructures : New opportunities for device design

@inproceedings{Jena2011PolarizationengineeringIG,
  title={Polarization-engineering in group III-nitride heterostructures : New opportunities for device design},
  author={Debdeep Jena and John E. Simon and Y X Wang and Yu Lian Cao and Kevin Goodman and Jai K. Verma and Satyaki Ganguly and Guowang Li and Kamal Karda and Vladimir V. Protasenko and Chuanxin Lian and Thomas H. Kosel and Patrick Fay and Huili Grace Xing},
  year={2011}
}
The role of spontaneous and piezoelectric polarization in III–V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined. 1 Introduction Spontaneous polarization exists along the (0001) (metal-polar) and ð0001Þ (N-polar) directions of wurtzite III–V nitride semiconductor crystals. Strain-induced piezoelectric polarization can either add to… CONTINUE READING