Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions

@article{Kazazis2018PolarizationEngineeredIS,
  title={Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions},
  author={Stylianos A. Kazazis and Elena Papadomanolaki and Eleftherios Iliopoulos},
  journal={IEEE Journal of Photovoltaics},
  year={2018},
  volume={8},
  pages={118-124}
}
The photovoltaic properties of (0 0 0 1) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative device architecture exploits the large polarization fields, and high-efficiency modules are achieved for In-rich… CONTINUE READING