Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

Abstract

F. Tuomisto; 1; 5, T. Suski1, H. Teisseyre1, M. Krysko1, M. Leszczynski1, B. Lucznik1, I. Grzegory1, S. Porowski1, D. Wasik2, A. Witowski2, W. Gebicki3, P. Hageman4, and K. Saarinen5 1 High Pressure Research Center, Unipress, Polish Academy of Sciences, 01-142 Warsaw, Poland 2 Institute of Experimental Physics, Warsaw University, Hoza 69, Warsaw, Poland 3… (More)

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