Polar charges induced electric hysteresis of ZnO nano/microwire for fast data storage.

We demonstrate an innovative memory device made of a single crystalline ZnO nanowire/microwire that works with a different mechanism from the p-n junction based memristor. A nonsymmetric, Schottky-Ohmic contacted ZnO nano/microwire can serve as a memristor if the channel length is short and the applied frequency is high. The observed phenomena could be… CONTINUE READING