Plasma chemistry of He/02/SiH4 and He/N20/SiH4 mixtures for remote plasma-activated chemical-vapor deposition of silicon dioxide

Abstract

Remote plasma-activated chemical-vapor deposition (RPACVD) provides a means to deposit thin dielectric films with low ion bombardment and while having high selectivity in generating precursors. In RPACVD of SiO,, gas mixtures of He/O2 or He/N20 are passed through a plasma, producing radicals and excited states that are mixed with silane downstream. Excited… (More)

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15 Figures and Tables