Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

@article{Budde2020PlasmaassistedMB,
  title={Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass},
  author={M. Budde and P. Mazzolini and J. Feldl and C. Golz and T. Nagata and S. Ueda and G. Hoffmann and M. Ramsteiner and O. Bierwagen},
  journal={arXiv: Materials Science},
  year={2020}
}
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100cm^2/Vs p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (<<1cm^2/Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility, lacking a well… Expand

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