Planarized InP/InGaAs heterojunction bipolar transistors with f/sub MAX/ > 500 GHz

@article{Sawdai2004PlanarizedIH,
  title={Planarized InP/InGaAs heterojunction bipolar transistors with f/sub MAX/ > 500 GHz},
  author={Donald James Sawdai and Paul Jinyun Chang and Vincent Gardena Gambin and Xiang Zeng and Junko Yamamoto and Kowk K. Loi and Gregg P. Leslie and Michael E. Barsky and Augusto Gutierrez-Aitken and A. Oki},
  journal={Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.},
  year={2004},
  pages={14-15 vol.2}
}
To meet the demands for next generation high-speed electronics, the InP-based heterojunction bipolar transistor (HBT) must be scaled vertically to minimize transit times, scaled laterally to minimize the emitter width (W/sub E/) and the base-collector junction capacitance (C/sub BC/), and fabricated with high yield to support large circuits. Lateral scaling can involve a variety of processing techniques. In this work, we developed a dielectric planarization process which enabled aggressive… CONTINUE READING