Planarized InP/InGaAs heterojunction bipolar transistors with f/sub MAX/ > 500 GHz

@article{Sawdai2004PlanarizedIH,
  title={Planarized InP/InGaAs heterojunction bipolar transistors with f/sub MAX/ > 500 GHz},
  author={D. Sawdai and P. Chang and V. Gambin and X. Zeng and J. Yamamoto and K. Loi and Gregg P. Leslie and M. Barsky and A. Gutierrez-Aitken and A. Oki},
  journal={Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.},
  year={2004},
  pages={14-15 vol.2}
}
  • D. Sawdai, P. Chang, +7 authors A. Oki
  • Published 2004
  • Physics
  • Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.
  • To meet the demands for next generation high-speed electronics, the InP-based heterojunction bipolar transistor (HBT) must be scaled vertically to minimize transit times, scaled laterally to minimize the emitter width (W/sub E/) and the base-collector junction capacitance (C/sub BC/), and fabricated with high yield to support large circuits. Lateral scaling can involve a variety of processing techniques. In this work, we developed a dielectric planarization process which enabled aggressive… CONTINUE READING
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