Corpus ID: 237428302

Pinhole-seeded lateral epitaxy and exfoliation on graphene-terminated surfaces

@inproceedings{Manzo2021PinholeseededLE,
  title={Pinhole-seeded lateral epitaxy and exfoliation on graphene-terminated surfaces},
  author={Sebastian Manzo and Patrick J. Strohbeen and Zheng Hui Lim and Vivek Saraswat and Michael S. Arnold and Jason Ken Kawasaki},
  year={2021}
}
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous… Expand

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No pinholes are observed. The dark lines are wrinkles. (b) SEM image after annealing above the native oxide desorption temperature (625 • C for 2 hours)
  • Pinholes formed in wet transferred graphene on GaAs (001). (a) SEM image of graphene transferred to GaAs (001), before annealing
Raman spectra before and after annealing above the native oxide desorption. We observed an increased Raman D peak after native oxide desorption (625 • C)