Piezoresistive properties of polysilicon films

@inproceedings{Gridchin1995PiezoresistivePO,
  title={Piezoresistive properties of polysilicon films},
  author={Victor A. Gridchin and V. M. Lubimsky and M. P. Sarina},
  year={1995}
}
Abstract A simple theoretical model for calculating the longitudinal, transverse and shear gauge factors of highly doped polycrystalline silicon films is presented. The calculation of the gauge factors is performed in terms of the elastoresistance and stiffness coefficients of monocrystalline silicon. The results for the longitudinal and transverse gauge factors are given in analytical form for 〈100〉, 〈110〉 and 〈111〉 films. Boron-doped polycrystalline silicon films have been investigated in the… CONTINUE READING

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Modelling and measurements of thermomechanical stress induced drift on polysilicon resistors with different layout

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