Physics of Textured III-Nitride Quantum Wells for Applications to LEDs

@article{Moustakas2005PhysicsOT,
  title={Physics of Textured III-Nitride Quantum Wells for Applications to LEDs},
  author={T. D. Moustakas and J. S. Cabalu and S. Riyopoulus},
  journal={2005 International Semiconductor Device Research Symposium},
  year={2005},
  pages={220-220}
}
Summary form only given. In this paper we report the growth of GaN/AlGaN MQWs by MBE on atomically-smooth (0001) GaN templates and (0001)-oriented GaN templates with random surface texture. We show that this approach of employing nanotextured surfaces and "wrinkled" QWs leads to the improvement of both the internal quantum efficiency as well the extraction efficiency. AFM studies show that the MQWs replicate the texture of the GaN template. The PL and CL spectra from the smooth MQWs are red… CONTINUE READING
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