Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs

Abstract

Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of gate field plate is effective in reducing buffer-related lag and current collapse when the acceptor density in the buffer layer is high. On the… (More)

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Cite this paper

@article{Onodera2011PhysicsbasedSO, title={Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs}, author={Hisashi Onodera and Atsushi Nakajima and Kensuke Horio}, journal={2011 6th European Microwave Integrated Circuit Conference}, year={2011}, pages={45-48} }