Physics-based noise modelling of semiconductor devices in largesignal operation including low-frequency noise conversion effects

@article{Ghione2005PhysicsbasedNM,
  title={Physics-based noise modelling of semiconductor devices in largesignal operation including low-frequency noise conversion effects},
  author={Giovanni Ghione and Fabrizio Bonani and Silvano Donati and Francesco Bertazzi and Giorgio Conte},
  journal={IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.},
  year={2005},
  pages={212-215}
}
A review is provided on state-of-the-art techniques for the physics-based numerical simulation of noise in semiconductor devices, with particular attention to large-signal forced operation and to the related noise frequency conversion. Open problems associated to the modeling of 1/f-like noise in large-signal operation through a superposition of GR noise sources are discussed with the help of simulation examples. Finally, a 2D physics-based noise analysis of a FET active mixer is presented