Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs

The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially… CONTINUE READING