Physics-based compact modeling for nonclassical CMOS

@article{Trivedi2005PhysicsbasedCM,
  title={Physics-based compact modeling for nonclassical CMOS},
  author={Vishal P. Trivedi and Jerry G. Fossum and Leo Mathew and Murshed M. Chowdhury and Weimin Zhang and Glenn O. Workman and Bich-Yen Nguyen},
  journal={ICCAD-2005. IEEE/ACM International Conference on Computer-Aided Design, 2005.},
  year={2005},
  pages={211-216}
}
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic double-gate MOSFETs with ultra-thin bodies, is overviewed, and its applications to double- and (multiple) independent-gate FinFET device and circuit design are demonstrated. 

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