Physics-based and compact models for self-heating in high-speed bipolar integrated circuits

Abstract

Bipolar transistors are extremely sensitive to temperature variations. Moreover, the adoption of advanced isolation techniques such as silicon-on-insulator (SOI) and deeptrench isolation (DTI) to increase device speed also dramatically increases self-heating, due to the poor thermal conductivity of silicon dioxide. In many cases, an estimate of self-heating… (More)

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Cite this paper

@inproceedings{Pacelli2002PhysicsbasedAC, title={Physics-based and compact models for self-heating in high-speed bipolar integrated circuits}, author={Andrea Pacelli}, year={2002} }