Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation

Abstract

We developed an original physics-based unified analytical model describing the transport from diffusive to ballistic regimes in double-gate MOSFETs. This model includes a new analytical model of the backscattering coefficient based on an accurate empirical approach. In addition, short-channel effects, carrier quantum-mechanical confinement, and degeneracy… (More)

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