Physically based models of electromigration: From Black's equation to modern TCAD models

@article{Orio2010PhysicallyBM,
  title={Physically based models of electromigration: From Black's equation to modern TCAD models},
  author={Roberto Lacerda de Orio and Hajdin Ceric and Siegfried Selberherr},
  journal={Microelectronics Reliability},
  year={2010},
  volume={50},
  pages={775-789}
}
Electromigration failure is a major reliability concern for integrated circuits. The continuous shrinking of metal line dimensions together with the interconnect structure arranged in many levels of wiring with thousands of interlevel connections, such as vias, make the metallization structure more susceptible to failure. Mathematical modeling of electromigration has become an important tool for understanding the electromigration failure mechanisms. Therefore, in this work we review several… CONTINUE READING
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