Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

@article{Sato2008PhysicalMO,
  title={Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects},
  author={Muneyuki Sato and Nao Umezawa and Junji Shimokawa and H. Arimura and Sakiko Sugino and Ayako Tachibana and Masatoshi Nakamura and Naofumi Mise and Satoshi Kamiyama and Tetsu Morooka and T. Eimori and Kenji Shiraishi and Kikuo Yamabe and Hirotatsu Watanabe and Keisaku Yamada and Takayuki Aoyama and T. Nabatame and Yasuo Nara and Yuzuru Ohji},
  journal={2008 IEEE International Electron Devices Meeting},
  year={2008},
  pages={1-4}
}
We have clarified the impact on reliability of La incorporation into the HfSiON gate dielectrics nMOSFETs (PBTI, TDDB). Although La incorporation is effective for pre-existing defect suppression, stress induced defect generation is more sensitive to stress voltage and temperature. This is caused by the elevation of the energy level of oxygen vacancy and high ionicity of La-O bond. The origin of defects is thought to be oxygen vacancy related defects, generated under positive stress and they are… CONTINUE READING
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M.Sato et al., VLSI Sypm

  • JAP S. Zafer
  • G. Kresse et al., : Phys. Rev. B 47,
  • 2004
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