Physical model of electroforming mechanism in oxide-based resistive switching devices (RRAM)

@article{Sun2014PhysicalMO,
  title={Physical model of electroforming mechanism in oxide-based resistive switching devices (RRAM)},
  author={Pengxiao Sun and Ling Li and Nianduan Lu and Hangbing Lv and Su Liu and Ming Liu},
  journal={2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
  year={2014},
  pages={1-3}
}
Resistive switching mechanism is an ongoing topic in resistive random access memory (RRAM) communities. In this work, a physical model including vacancy generation, drift/diffusion mechanisms is developed to characterize the forming process in valence change resistive switching memories (VCM). This model addresses the intrinsic nature of forming time dependence on pulse amplitude and temperature, which is attributed to combined effects of vacancy generation and migration. The microscopic… CONTINUE READING

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