Physical model for Random Telegraph Noise amplitudes and implications

  title={Physical model for Random Telegraph Noise amplitudes and implications},
  author={Richard G. Southwick and K. P. L. Cheung and J. P. Campbell and S. A. Drozdov and J. T. Ryan and J. S. Suehle and A. S. Oates},
  journal={2012 IEEE Silicon Nanoelectronics Workshop (SNW)},
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the amplitude distribution - the limiting cases that are rare but nevertheless wreak havoc on circuit yield and reliability. Since one cannot realistically measure enough devices to imitate a large circuit, a physics-based quantitative model is… CONTINUE READING

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