Physical limits of heterostructure field-effect transitors and possibilities of novel quantum field-effect devices

@inproceedings{Sakaki1986PhysicalLO,
  title={Physical limits of heterostructure field-effect transitors and possibilities of novel quantum field-effect devices},
  author={Hiroyuki Sakaki},
  year={1986}
}
Physical processes which govern the switching speed of heterostructure field-effect transistors, including high-electron mobility transistors, are discussed to show that the ultimate switching speed is of the order of one ps. The importance of adopting new FET structures with higher current-drive capability is pointed out, including selectively-doped double-hetero structures and material systems other than GaAs-AlGaAs. Possibilities of novel field-effect devices, such as velocity modulation… CONTINUE READING