Physical and materials limitations on burnout voltage of GaAs power MESFET's

@article{Tiwari1980PhysicalAM,
  title={Physical and materials limitations on burnout voltage of GaAs power MESFET's},
  author={Sandip Tiwari and L E Eastman and L. S. Rathbun},
  journal={IEEE Transactions on Electron Devices},
  year={1980},
  volume={27},
  pages={1045-1054}
}
This paper presents a study of factors limiting the burnout voltage of GaAs power MESFET's. A new device geometry had been investigated. Novel techniques using electron-beam induced current (EBIC) in the drain loop in a scanning electron microscope (SEM) and the shift in carbon Auger line in a scanning Auger microscope (SAM) have been applied to study the… CONTINUE READING