Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology - Electron Devices and Solid-State Circuits, 2003 IEEE Conference on


AbstmctThe influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 pm CMOS technology on their intrinsic (physical) and eleetrienl bandwidth is analyzed. Three photodiode atrUCtures are studied: nwell/psubstrate. p+/nwell/paubstrate and p+/nwell. The photodiode bandwidths are compared for X=650 nm… (More)


5 Figures and Tables