Physical TCAD Model for Proton Radiation Effects in SiGe HBTs

Abstract

Performance degradation of the SiGe HBT after proton irradiation is investigated using a new physical TCAD model built into the Synopsys Sentaurus tool. The general conception of the model is based on the additive effects of ionization and displacement effects influence on transistor base current. New equations for the physical parameters τ, S, Nit… (More)

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Cite this paper

@article{Petrosyants2016PhysicalTM, title={Physical TCAD Model for Proton Radiation Effects in SiGe HBTs}, author={Konstantin O. Petrosyants and Maxim Kozhukhov}, journal={IEEE Transactions on Nuclear Science}, year={2016}, volume={63}, pages={2016-2021} }