Physical Principles of Avalanche Transistor Pulse Circuits

@article{Hamilton1959PhysicalPO,
  title={Physical Principles of Avalanche Transistor Pulse Circuits},
  author={Douglas J. Hamilton and J. F. Gibbons and William Shockley},
  journal={Proceedings of the IRE},
  year={1959},
  volume={47},
  pages={1102-1108}
}
A simple physical theory is developed which permits a calculation of the significant points of avalanche transistor transient behavior. A model for the transistor is defined in terms of charge variables and the physical parameters of the device. The transient performance of the model is calculated by focusing attention on the minority carrier charge stored in the base region and the influence of basewidth modulation upon this stored charge. In the charge formulation of the problem, the physical… 

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  • Physics, Engineering
    IRE Trans. Electron. Comput.
  • 1960
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  • W. ShockleyJ. Gibbons
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    Transactions of the American Institute of Electrical Engineers, Part I: Communication and Electronics
  • 1959
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