Physical Principles of Avalanche Transistor Pulse Circuits

  title={Physical Principles of Avalanche Transistor Pulse Circuits},
  author={Douglas J. Hamilton and J. F. Gibbons and William Shockley},
  journal={Proceedings of the IRE},
A simple physical theory is developed which permits a calculation of the significant points of avalanche transistor transient behavior. A model for the transistor is defined in terms of charge variables and the physical parameters of the device. The transient performance of the model is calculated by focusing attention on the minority carrier charge stored in the base region and the influence of basewidth modulation upon this stored charge. In the charge formulation of the problem, the physical… 

Current Build-Up in Avalanche Transistors with Resistance Loads

  • D. Hamilton
  • Physics, Engineering
    IRE Trans. Electron. Comput.
  • 1960
A transient analysis for the avalanche transistor is carried out through the use of a diffusion model described in terms of charge variables; it is found that the rise time for the resistance-load case is about four times that for a capacitance- load case which produces the same peak current.

Silicon-on-insulator control impact-ionization-avalanche transistor

In thin silicon-on-insulator structures, the gate effectively controls the longitudinal component of the electric field intensity in the pn+ junction, and thus the impact avalanche ionization of

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The positive- and negative-resistance characteristics of the avalanche-injection diode are derived from a set of fundamental equations. The field dependence of the ionization rate-constant, the

Static and dynamic behaviour of transistors in the avalanche region

The behavior has been studied assuming that the transistor is acting as a nonlinear negative resistance dipole, defined from its I-V characteristics. A simple method has been obtained to plot the

On the Application of the Base Charge Concept to the Design of Transistor Switching Circuits

This paper describes a new method of measuring the effective decay time of excess minority carriers in the base of junction transistors, the results of which show an approximately exponential decay

A gate Modulated avalanche bipolar transistor in 130nm CMOS technology

A novel Geiger-mode avalanche bipolar transistor structure is realized in a 130nm, low-voltage CMOS technology, enabling capacitive sensor interfaces and direct device-level, analogue-digital conversion.

Spontaneous oscillations of 2N708 transistors in avalanche condition with open emitter

This letter describes some characteristics of spontaneous oscillations of transistors in particular avalanche conditions. An interesting performance of this behavior is the high speed and power of

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The possible ways of avalanche switching and its methods of parameter determination are discussed, including some new transient switching parameters, CA, rA, TA. A versatile avalanche square pulse

Analysis of avalanche breakdown in bipolar transistors based on majority carrier transportation

This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for different bias conditions of the emitter-base junction. This analysis revolves around the



A method of designing transistor avalanche circuits with application to a sensitive transistor oscilloscope

A simple method of designing avalanche circuits, based on a method developed for point-contact circuits, which will operate with any transistor without requiring adjustment is presented.

The Spacistor, A New Class of High-Frequency Semiconductor Devices

New devices are considered in which electrons or holes are injected directly into space-charge regions of reversebiased junctions avoiding the diffusion of carriers through field-free regions. The

A study of high-speed avalanche transistors

The discovery of an extremely fast relaxation oscillation in a junction transistor led to a study of this mode of operation. It was found that the high speed of operation was due to a combination of

Theory of transient build-up in avalanche transistors

  • W. ShockleyJ. Gibbons
  • Physics
    Transactions of the American Institute of Electrical Engineers, Part I: Communication and Electronics
  • 1959
It is found that an avalanche transistor biased into the negative resistance range will deliver an exponentially increasing current into a capacitor connected between the emitter and collector. For a

On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current

Existing theories of the junction transistor fail to predict the very significant variation of current-amplification factor, αcb, as the emitter current is varied. This variation has been very