Physical Model of the Junctionless UTB SOI-FET

@article{Gnani2012PhysicalMO,
  title={Physical Model of the Junctionless UTB SOI-FET},
  author={E.. Gnani and A. Gnudi and S.. Reggiani and G.. Baccarani},
  journal={IEEE Transactions on Electron Devices},
  year={2012},
  volume={59},
  pages={941-948}
}
In this paper, we model the electrical properties of a junctionless (JL) ultrathin-body silicon-on-insulator field-effect transistor (SOI-FET), which has been proposed as a possible alternative to the junction-based SOI-FET. The model is based on improved depletion approximation, which provides a very accurate solution of Poisson's equation and allows for the computation of the substrate, as well as the Si-body lower- and upper-surface potentials by an iterative procedure, which accounts for… CONTINUE READING
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