Physical Model for the Resistivity and Temperature Coefficient of Resistivity in Heavily Doped Polysilicon

Abstract

One of the key benefits of using polysilicon as the material for resistors and piezoresistors is that the temperature coefficient of resistivity (TCR) can be tailored to be negative, zero, or positive by adjusting the doping concentration. This paper focuses on optimization of the boron doping of low-pressure chemical vapor deposited polysilicon resistors… (More)

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