Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M$\,\times\,$ 4 SDRAM

@article{Edmonds2008PhysicalMO,
  title={Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M\$\,\times\,\$ 4 SDRAM},
  author={L. D. Edmonds and L. Z. Scheick},
  journal={IEEE Transactions on Nuclear Science},
  year={2008},
  volume={55},
  pages={3265-3271}
}
It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro (i.e., from a single particle hit) displacement damage, which creates a leakage current that drains the storage capacitor. 

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