Physical Insights on BJT-Based 1T DRAM Cells

@article{Zhou2009PhysicalIO,
  title={Physical Insights on BJT-Based 1T DRAM Cells},
  author={Zhenming Zhou and J. G. Fossum and Zhichao Lu},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={565-567}
}
The basic operation of BJT-based floating-body 1T DRAM cells on SOI is analyzed with supportive numerical device simulation. Extreme sensitivity of the charging process (write ldquo1rdquo) to the offset (Deltat WB) between the word-line and bit-line voltage pulses is revealed and explained. The necessity of a positive Deltat WB for successful write ldquo1rdquo is related to establishing a high gate capacitance, which is the predominant charge-storage element in the BJT-based cell. Such charging… CONTINUE READING

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