Photovoltaic effect for narrow-gap Mott insulators

  title={Photovoltaic effect for narrow-gap Mott insulators},
  author={E. Manousakis},
  journal={Physical Review B},
  • E. Manousakis
  • Published 2010
  • Physics, Materials Science
  • Physical Review B
  • We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency of such a device, if we choose an appropriate narrow-gap Mott insulator, can be significantly enhanced due to impact ionization caused by the photoexcited ``hot'' electron/hole pairs. Namely, the photoexcited electron and/or hole can convert its excess energy… CONTINUE READING
    22 Citations

    Figures from this paper

    Rectification by doped Mott-insulator junctions
    • 2
    • PDF
    Optimizing the role of impact ionization in conventional insulators
    • 2
    • PDF
    Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces
    • 6
    • PDF