Photosensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode


Metal-oxide-semiconductor (MOS) photodiode was examined under illumination of 30, 50, and 70 mW/cm2. By measuring devices with different oxide thicknesses, we found that the light current increases as the oxide thickness increases. We suggest that the light current is caused by edge Schottky barrier height modulation of holes induced by photogenerated… (More)


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