Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions.

  title={Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions.},
  author={Shruti Subramanian and Quinn Campbell and Simon K. Moser and Jonas Kiemle and P. Zimmermann and Paul Seifert and Florian Sigger and Deeksha Sharma and Hala A. Al-Sadeg and Michael Labella and Dacen Waters and Randall M. Feenstra and Roland J. Koch and Chris Jozwiak and Aaron Bostwick and Eli Rotenberg and Ismaila Dabo and Alexander W. Holleitner and Thomas E. Beechem and Ursula Wurstbauer and Joshua A. Robinson},
  journal={ACS nano},
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10× larger photocurrent is extracted at the EG/MoS2 interface when compared to the metal (Ti/Au)/MoS2… 
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