Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

Abstract

Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)2 solar cell devices, in the range of 330–1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump–probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.

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@inproceedings{Nalla2014PhotophysicalIO, title={Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell}, author={Venkatram Nalla and John C. W. Ho and Sudip Kumar Batabyal and Yue Wang and Alfred Iing Yoong Tok and Handong Sun and Lydia Helena Wong and Nikolay I. Zheludev}, year={2014} }