Photonic switching in InAs/InP quantum dots

Abstract

We report all-optical switching due to state-filling in quantum dots (QDs). The switching energy is as low as 6 fJ since state-filling requires only 2 electron-hole pairs per QD. The single layer of InAs/InP QDs is inserted within a InGaAsP/InP waveguide which are processed into a Mach-Zehnder interferometric switch (MZI). A 1530-1570 nm probe beam is… (More)

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@article{Haverkort2004PhotonicSI, title={Photonic switching in InAs/InP quantum dots}, author={J. E. M. Haverkort and R. V. Prasanth and S. Dilna and E. W. Bogaart and J. J. G. M. van der Tol and E. A. Patent and Guanxing Zhao and Qi-huang Gong and P. J. van Veldhoven and Richard Notzel and J. H. Wolter}, journal={4th IEEE Conference on Nanotechnology, 2004.}, year={2004}, pages={86-88} }