Photonic switching in InAs/InP quantum dots

@article{Haverkort2004PhotonicSI,
  title={Photonic switching in InAs/InP quantum dots},
  author={J. E. M. Haverkort and Ravi Prasanth and S. Dilna and E. W. Bogaart and J. J. G. M. van der Tol and E. A. Patent and Guomin Zhao and Qihuang Gong and P. J. van Veldhoven and Richard Notzel and J. D. Wolter},
  journal={4th IEEE Conference on Nanotechnology, 2004.},
  year={2004},
  pages={86-88}
}
We report all-optical switching due to state-filling in quantum dots (QDs). The switching energy is as low as 6 fJ since state-filling requires only 2 electron-hole pairs per QD. The single layer of InAs/InP QDs is inserted within a InGaAsP/InP waveguide which are processed into a Mach-Zehnder interferometric switch (MZI). A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from above. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity… CONTINUE READING