Photoluminescence study of defect in ion-implanted thermal SiO2 films

@inproceedings{Nishikawa1995PhotoluminescenceSO,
  title={Photoluminescence study of defect in ion-implanted thermal SiO2 films},
  author={Hiroyuki Nishikawa and Eiichiro Watanabe and D. Nagano-shi Ito and Makoto Takiyama and A. Ieki and Yoshimichi Ohki},
  year={1995}
}
Photoluminescence (PL) study was performed on B or P ion‐implanted thermal SiO2 films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen‐deficient‐type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen‐deficient‐type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO2 decays exponentially… CONTINUE READING

Similar Papers

Citations

Publications citing this paper.