Photoluminescence studies of impurity transitions in AlGaN alloys


Deep ultraviolet photoluminescence PL spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers—isolated cation vacancy with three negative charges VIII 3− and cation vacancy complex with two-negative charges VIII complex 2−—a group of impurity… (More)

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