Photoluminescence studies of impurity transitions in AlGaN alloys

Abstract

Deep ultraviolet photoluminescence PL spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers—isolated cation vacancy with three negative charges VIII 3− and cation vacancy complex with two-negative charges VIII complex 2−—a group of impurity… (More)

4 Figures and Tables

Topics

  • Presentations referencing similar topics