Photoluminescence of tetrahedral quantum-dot quantum wells.

  title={Photoluminescence of tetrahedral quantum-dot quantum wells.},
  author={Vladimir A. Fonoberov and Evghenii P. Pokatilov and Vladimir M. Fomin and Jozef T. Devreese},
  journal={Physical review letters},
  volume={92 12},
Taking into account the tetrahedral shape of a quantum-dot quantum well (QDQW) when describing excitonic states, phonon modes, and the exciton-phonon interaction in the structure, we obtain within a nonadiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast to the dark ground state for a spherical QDQW. The position of the phonon peaks in the… Expand
37 Citations
Effects of the Electron–Phonon Interaction in Semiconductor Quantum Dots
Publisher Summary This chapter explains the state-of-the-art nanodevices based on quantum dots that have provided new insights in the fundamental physical properties of confined semiconductors asExpand
Hydrostatic stress dependence of the exciton–phonon coupled states in cylindrical quantum dots
Abstract We investigate theoretically the effects of compressive stress on the binding energy of an exciton in a cylindrical quantum dot (QD) using a variational procedure within the effective massExpand
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantumExpand
Charge-carrier states and light absorption in ordered quantum dot superlattices
We have theoretically investigated the electron and hole energy spectra and light absorption in the three-dimensionally ordered quantum dots superlattices (QDS) made of the direct band-gapExpand
Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes
We have theoretically investigated the origin of ultraviolet photoluminescence (PL) in ZnO quantum dots with diameters from 2 to 6 nm. Two possible sources of ultraviolet PL have been considered:Expand
Transversal confined polar optical phonons in spherical quantum-dot/quantum-well nanostructures
Confined polar optical phonons are studied in a spherical quantum-dot/quantum-well (QD/QW) nanostructure by using an approach that takes into account the coupling of electromechanical oscillationsExpand
Electron-LO-phonon interaction in wurtzite GaN quantum wells under a magnetic field
Abstract We calculate the electron–LO-phonon relaxation rates in wurtzite GaN quantum wells in the presence of a magnetic field parallel to the growth direction. Using the dielectric continuum modelExpand
Phonon coherence and new set of sidebands in phonon-assisted photoluminescence
We investigate excitonic polaron states comprising a local exciton and phonons in the longitudinal optical (LO) mode by solving the Schrodinger equation. We derive an exact expression for the groundExpand
Quantum dot energy levels and spectrum for different geometries
The dispersion in the dot size, shape, and composition leads to a difficult comparison with experimental spectroscopy and transport data even if the growth conditions are similar. In this work, anExpand
Polar optical phonons in wurtzite spheroidal quantum dots: theory and application to ZnO and ZnO/MgZnO nanostructures
Polar optical-phonon modes are derived analytically for spheroidal quantum dots with wurtzite crystal structure. The developed theory is applied to freestanding spheroidal ZnO quantum dots and toExpand


Photoluminescence of spherical quantum dots
In order to interpret the phonon-assisted optical transitions in semiconductor quantum dots, a theory is developed comprising the exciton interaction with both adiabatic and Jahn-Teller phonons andExpand
Structural and spectroscopic investigations of CdS/HgS/CdS quantum-dot quantum wells.
Epitaxial growth in a CdS/HgS heterostructure of nanometer dimensions, prepared by methods of wet chemistry, is demonstrated and photophysical measurements provide evidence for charge-carrier localization within the HgS well. Expand
A quantum dot quantum well : CdS/HgS/CdS
Abstract A wet chemical synthetic route is presented for the preparation of a spherical quantum well. The quantum well consists of a core of size-quantized CdS, a monolayer of HgS and approximatelyExpand
Development of an eight-band theory for quantum dot heterostructures
We derive a nonsymmetrized eight-band effective-mass Hamiltonian for quantum dot heterostructures (QDH's) in Burt's envelope-function representation. The $8\ifmmode\times\else\texttimes\fi{}8$ radialExpand
Nanotechnology is the set of technologies that enables the manipulation, study or exploitation of very small (typically less than 100 nanometres) structures and systems. To put this into perspective,Expand
Statistical packages have been used for decades to analyze large datasets or to perform mathematically intractable statistical methods. These packages are not capable of working with random variablesExpand
  • Rev. B 66, 085310
  • 2002
  • Rev. B 60, 1921
  • 1999
Phys. Rev. Lett
  • Phys. Rev. Lett
  • 2004
  • Rev. B 67, 205320
  • 2003