Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films


We report ion-implanted Er ions into Ge<inf>11.5</inf>As<inf>24</inf>Se<inf>64.5</inf> thin films with different doses, and subsequently thermal-annealed the films with different times. The characterization results indicated that the thickness, refractive index and optical bandgap of the films can be stabilized with 3 hour thermal annealing. The 1.5 &#x03BC… (More)


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@article{Yan2011PhotoluminescenceIE, title={Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films}, author={Kunlun Yan and Rongping Wang and K. Vu and Robert Glen Elliman and Kidane Belay and Barry Luther-Davies}, journal={2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology}, year={2011}, pages={1612-1616} }